描述：类型：N沟道 漏源电压(Vdss)：200V 连续
These N-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.漏极电流(Id)：18A 功率(Pd)：100W 导通电阻(RDS(on)@Vgs,Id)：100mΩ@10V,11A 阈值电压(Vgs(th)@Id)：4.9V@100uA N沟道,200V,18A,80mΩ@10V
产品型号：IRFB4020PBF
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